Development of GaN-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular epitaxy
Much of the work done on ultraviolet (UV) and visible III-Nitrides-based light emitting diodes (LEDs) involves growth by metal-organic chemical vapor deposition (MOCVD). In this dissertation, the growth, development, and fabrication of III-Nitrides-based UV and visible LEDs with very high photon con...
| Príomhchruthaitheoir: | |
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| Formáid: | Electronic Resource |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
Ann Arbor Michigan
ProQuest Information and Learning Company
[2006]
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| Rochtain ar líne: | Full text access requires UP Webmail login |