Formation of nanopillars on 4H-SiC via self-masking CF4 plasma etching in a gas disharge ion source
Silicon carbide is a promising semiconductor material with favourable properties such as wide bandgap, high radiation resistance and high electrical and chemical stability even at extreme environments. However, it emits light poorly which limits its application in optoelectronics. This study reports...
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| Định dạng: | Luận văn |
| Ngôn ngữ: | English |
| Được phát hành: |
Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2013.
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