Investigation on Self-Assembled InAs Quantum dots embedded in GaAs p-i-n active region for photovoltaic cell application
A baseline for solar cell technology was implemented at the Condensed Matter Physics Laboratory of the National Institute of Physics by incorporating InAs qantum dots (QDs) to the GaAs-based p-i-n layer. Three QD samples of different sizes were grown and characterized optically before inserting in t...
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| Aineistotyyppi: | Opinnäyte |
| Kieli: | English |
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Quezon City
National Institute of Physics, College of Science, University of the Philippines Diliman
2010
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