Synthesis of aluminum nitride thin film using reactive RF-magnetron sputtering

Synthesis of aluminum nitride thin film using reactive RF-magnetron sputtering

Aluminum nitride (AIN) thin films were grown using reactive rf-magnetron sputtering with a sputtering gas composed of argon and nitrogen mixture at a partial pressure ratio of 1:3. Films were grown at 70W of rf-power without application of substrate heating from an external source. The deposited fi...

Full description

Bibliographic Details
Main Author: Semblante, Oliver D. (Author)
Other Authors: Somintac, Armando S. (thesis adviser.)
Format: Thesis
Language:English
Subjects:
Aluminum nitride.
Thin films.