PVT-aware digital techniques for low-power, 0.5V, on-chip processing unit for the SmartWire node in 65nm CMOS process

Challenges in designing the SmartWire node include voltage variation of 475mV to 500mV and temperature variation of 0° to 120°C on top of process variations while maintaining a maximum chip area of 5mm^2. However, because current digital design methodologies do not consider these challenges, failure...

Полное описание

Библиографические подробности
Главный автор: Sebastian, Sherry Joy Alvionne (Автор)
Формат: Диссертация
Язык:English
Опубликовано: Quezon City College of Engineering, University of the Philippines Diliman 2014.
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