A design methodology for implementing RF CMOS low noise amplifiers in a 0.25 uM CMOS process

A design methodology for implementing RF CMOS low noise amplifiers in a 0.25 uM CMOS process

In this paper, a methodology in designing CMOS Low Noise Amplifiers (LNAs) in a 0.25 um CMOS process is proposed. Three power matching techniques are considered in the design of the LNA. These are: (1) matching for maximum available gain, (2) matching for a constant gain, and (3) matching for stabil...

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में प्रकाशित:Philippine Engineering Journal 29, 2(3 copies) (2008(D)).
मुख्य लेखक: Gusad-De Leon, Maria Theresa
अन्य लेखक: Alarcon, Louis P.
स्वरूप: लेख
भाषा:English
विषय:
Metal oxide semiconductors, Complementary > Testing.
Low noise amplifiers.
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