A design methodology for implementing RF CMOS low noise amplifiers in a 0.25 uM CMOS process

A design methodology for implementing RF CMOS low noise amplifiers in a 0.25 uM CMOS process

In this paper, a methodology in designing CMOS Low Noise Amplifiers (LNAs) in a 0.25 um CMOS process is proposed. Three power matching techniques are considered in the design of the LNA. These are: (1) matching for maximum available gain, (2) matching for a constant gain, and (3) matching for stabil...

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הוצא לאור ב:Philippine Engineering Journal 29, 2(3 copies) (2008(D)).
מחבר ראשי: Gusad-De Leon, Maria Theresa
מחברים אחרים: Alarcon, Louis P.
פורמט: Article
שפה:English
נושאים:
Metal oxide semiconductors, Complementary > Testing.
Low noise amplifiers.
גישה מקוונת:Also available online for University of the Philippines Diliman. Click here