Growth, optical and structural characterization of InP nanostructures with In0.4Ga0.6P insertion layer.
Quantum dots in InP/GaAs system were grown by low pressure MOVPE via the Stranski-Krastanow growth mode. In order to control the dots diameter and improve the size uniformity and photoluminescence (PL) emission, the ternary In0.4Ga0.6P layers thickness (0-4) monolayers (MLs) were inserted. The growt...
| Published in: | Asean Engineering Journal 1, 2 (2011). |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Subjects: |