Performance of a stacked p-i-n and high electron mobility (HEMT) layers on a single GaAs substate for optoelectronic integrated circuits

Performance of a stacked p-i-n and high electron mobility (HEMT) layers on a single GaAs substate for optoelectronic integrated circuits

Bibliographic Details
Main Author: Azares, Jonathan Deluyas
Format: Thesis
Language:English
Published: 2012.
Subjects:
Electron mobility.
Integrated circuits.
Optoelectronic devices.