InχGa1-χAs on (100) InP substrate optoelectronic devices via molecular beam epitaxy
"Molecular Beam Epitaxy was used to deposit InχGa₁₋χAs layers and PN optoelectronic devices on (100) InP substrate in the interest of extending the wavelength operation of existing GaAs-based optoelectronic devices. InχGa₁₋χAs/InP system is capable of detection or emission at higher wavelength...
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| 格式: | Thesis |
| 語言: | English |
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c2004.
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