Optimization of the growth and fabrication of delta-doped InXGa1-XAs pseudomorphic high-electron mobility transistor

Optimization of the growth and fabrication of delta-doped InXGa1-XAs pseudomorphic high-electron mobility transistor

Podrobná bibliografie
Hlavní autor: Baldo III, Carlos F.
Médium: Diplomová práce
Jazyk:English
Vydáno: 2008.
Témata:
Modulation-doped field-effect transistors.