Crystal method.

The author discusses a potential method for commercial production of GaN substrates, developed by a UK company, NanoGaN. Their nanocolumn growth technique is used to grow high-quality nanosized gallium nitride wafers on sapphire substrate. This method is based on the vapour deposition of GaN thin fi...

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Bibliographic Details

Published in:	IEEE spectrum 47, 1 (2010).
Main Author:	Stevenson, R.
Format:	Article
Language:	English
Subjects:	Al2O3. GaN. NanoGaN. Crystal defects. Crystal method. High quality gallium nitride crystals. Nanometer-size holes. Nanosized wafer growth. Sapphire substrate. Thin film deposition. Vapour deposition.