Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2

Electrical properties of metal-ferroelectric-insulator-semiconductor field effect transistors (MFIS-FETs) using the polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE))/ZrO2

Bibliographische Detailangaben
Veröffentlicht in:Journal of the Ceramic Society of Japan 118, 1383 (2010).
1. Verfasser: Lee, Gwang-Geun
Format: Artikel
Sprache:English
Schlagworte:
Memory window.
MFIS-FET.
ZrO2.