Reverse-body bias and supply collapse for low effective standby power.

Reverse-body bias and supply collapse for low effective standby power.

Integrated circuits fabricated on a low-leakage process typically display lower performance due to the high threshold voltage (Vt) transistors. Higher performance microprocessors sacrifice power efficiency by decreasing Vt. We show that a processor built on a low Vt process can achieve the power-per...

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הוצא לאור ב:IEEE Transactions on VLSI systems 12, 9 (2004).
מחבר ראשי: Clark, L.T
פורמט: Article
שפה:English
נושאים:
Drowsy mode.
Embedded static random access memory.
High operational frequency.
Integrated circuits.
Low effective standby power.
Low leakage process.
Microprocessors.
Multithreshold CMOS.
Power efficiency.
Power model.
Reverse body bias.
Voltage collapse.