Reverse-body bias and supply collapse for low effective standby power.
Integrated circuits fabricated on a low-leakage process typically display lower performance due to the high threshold voltage (Vt) transistors. Higher performance microprocessors sacrifice power efficiency by decreasing Vt. We show that a processor built on a low Vt process can achieve the power-per...
| 發表在: | IEEE Transactions on VLSI systems 12, 9 (2004). |
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| 主要作者: | |
| 格式: | Article |
| 語言: | English |
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