A temperature-insensitive self-recharging circuitry used in DRAMs.

This paper presents a practical self-recharging circuitry for DRAMs. The proposed self-recharging circuitry not only reduces the standby power by monitoring the voltage drop caused by the data loss of a memory cell but also adjusts the recharging period of the memory cell that results from leakage c...

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הוצא לאור ב:	IEEE Transactions on VLSI systems 13, 3 (2005).
מחבר ראשי:	Chua-Chin Wang
פורמט:	Article
שפה:	English
נושאים:	0.35 micron. 1 kbit. DRAM. TSMC 1P4M CMOS process. Leakage currents. Memory cell. Power reduction. Temperature insensitive self recharging circuit.