A built-in self-repair design for RAMs with 2-D redundancy.

This brief presents a built-in self-repair (BISR) scheme for semiconductor memories with two-dimensional (2-D) redundancy structures, i.e., spare rows and spare columns. The BISR design is composed of a built-in self-test module and a built-in redundancy analysis (BIRA) module. The BIRA module execu...

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Bibliografski detalji
Izdano u:IEEE Transactions on VLSI systems 13, 6 (2005).
Glavni autor: Jin-Fu Li
Format: Članak
Jezik:English
Teme: