Accurate Prediction of Substrate Parasitics in Heavily Doped CMOS Processes Using a Calibrated Boundary Element Solver.

Accurate Prediction of Substrate Parasitics in Heavily Doped CMOS Processes Using a Calibrated Boundary Element Solver.

This paper presents an automated methodology for calibrating the doping profile and accurately predicting substrate parasitics with boundary element solvers. The technique requires fabrication of only a few test structures and results in an accurate three-layered approximation of a heavily doped epi...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Τόπος έκδοσης:IEEE Transactions on VLSI systems 13, 7 (2005).
Κύριος συγγραφέας: Sharma, A.
Μορφή: Άρθρο
Γλώσσα:English
Θέματα:
Green function.
Si.
Accurate three-layered approximation.
Automatic doping profile calibration.
Calibrated boundary element solver.
Heavily doped CMOS processes.
Heavily doped epitaxial silicon substrate.
Integrated circuit noise.
Substrate noise coupling.
Substrate parasitic prediction.
Substrate resistance extraction.