Efficient testing of SRAM with optimized march sequences and a novel DFT technique for emerging failures due to process variations.
With increasing inter-die and intra-die parameter variations in sub-100-nm process technologies, new failure mechanisms are emerging in CMOS circuits. These failures lead to reduction in reliability of circuits, especially the area-constrained SRAM cells. In this paper, we have analyzed the emerging...
Published in: | IEEE Transactions on VLSI systems 13, 11 (2005). |
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Format: | Article |
Language: | English |
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