Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy.

Snubberless voltage sharing of series-connected insulated-gate devices by a novel gate control strategy.

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Insulated gate devices, such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs), are increasingly used in high-voltage power converters where a request for fast power switches is growing. Series connection of devices is a viable approach to...

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Bibliographic Details
Published in:IEEE Transactions on power electronics 16, 1 (2001).
Main Author: Belverde, G.
Format: Article
Language:English
Subjects:
Fast power switches.
Gate control strategy.
High-voltage power converters.
Power IGBTs.
Power MOSFETs.
Series-connected insulated-gate devices.
Snubberless voltage sharing.
Steady-state.
Switching transients.
Voltage balance.
Voltage blocking capability.