SiC power diodes provide breakthrough performance for a wide range of applications.
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power conve...
| Published in: | IEEE Transactions on power electronics 16, 2 (2001). |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Subjects: |