00000cab a22000003a 4500 UP-99796217609517123 Buklod 20231007234451.0 m |o d | ta 101029s xx d | ||r ||||| || DENGII eng Holland, S.E. Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon. pp. 225-238 Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response. 1E4 ohmcm. ITO. ITO capping. InSnO. SIMS depth profile. Si. Astronomical telescopes. Bias voltage. Buried channel PMOSFET. Charge-coupled devices. Dark current. Depletion depths. Fully depleted back-illuminated CCDs. High-resistivity n-Si. Inverse square capacitance. Near-infrared response. Noise. Ohmic contact. Reverse leakage current. Short-wavelength response. Thin in situ doped polycrystalline silicon layer. Wafer back side. SiO2. SiO2 capping. IEEE Transactions on electron devices 50, 1 (2003). FO Article