Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms.

Two-dimensional monolithic lead chalcogenide infrared sensor arrays on silicon read-out chips and noise mechanisms.

A two-dimensional narrow-gap infrared (IR) focal plane array on an Si substrate where the Si substrate contains the active addressing electronics is described. The array consists of 96 × 128 pixels with 75-μm pitch and is fabricated in a lead-chalcogenide layer grown epitaxially on the Si read-out c...

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Pubblicato in:IEEE Transactions on electron devices 50, 1 (2003).
Autore principale: Zogg, H.
Natura: Articolo
Lingua:English
Soggetti:
1 Gohm.
12288 pixel.
128 pixel.
4 Mohm.
5.5 micron.
75 micron.
95 K.
96 pixel.
Al-metallization.
CMOS technology.
PbTe.
PbTe 2-D narrow-gap infrared focal plane array.
Si.
Si read-out chips.
Si substrate.
Access transistor.
Active addressing electronics.
Bare Si area.
Cut-off wavelength.
Epitaxial growth.
Epitaxially grown layer.
Mean differential resistances.
Molecular beam epitaxy.
Noise mechanisms.
Photovoltaic IR sensors.
Shunt resistance.
Threading dislocation density.
Yield.
Zero bias.