Transversal-readout architecture for CMOS active pixel image sensors.

Novel architecture for CMOS active pixel image sensors (APSs), which eliminates the vertically striped fixed pattern noise (FPN), is presented. There are two kinds of FPN for CMOS APSs. One originates from the pixel-to-pixel variation in dark current and source-follower threshold voltage, and the ot...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 1 (2003).
Main Author:	Miyatake, S.
Format:	Article
Language:	English
Subjects:	240 pixel. 320 pixel. 76800 pixel. CMOS active pixel image sensors. Buried-photodiode device. Column readout structures. Column-reset transistor. Column-select transistor. Column-to-column variation. Dark current. Photodiode. Pixel-to-pixel variation. Row-reset transistor. Source-follower input transistor. Source-follower threshold voltage. Transversal-readout architecture. Vertically striped FPN. Vertically striped fixed pattern noise.