Transversal-readout architecture for CMOS active pixel image sensors.

Novel architecture for CMOS active pixel image sensors (APSs), which eliminates the vertically striped fixed pattern noise (FPN), is presented. There are two kinds of FPN for CMOS APSs. One originates from the pixel-to-pixel variation in dark current and source-follower threshold voltage, and the ot...

Szczegółowa specyfikacja

Opis bibliograficzny
Wydane w:	IEEE Transactions on electron devices 50, 1 (2003).
1. autor:	Miyatake, S.
Format:	Artykuł
Język:	English
Hasła przedmiotowe:	240 pixel. 320 pixel. 76800 pixel. CMOS active pixel image sensors. Buried-photodiode device. Column readout structures. Column-reset transistor. Column-select transistor. Column-to-column variation. Dark current. Photodiode. Pixel-to-pixel variation. Row-reset transistor. Source-follower input transistor. Source-follower threshold voltage. Transversal-readout architecture. Vertically striped FPN. Vertically striped fixed pattern noise.