A CMOS image sensor with dark-current cancellation and dynamic sensitivity operations.
An ultralow dark-signal and high-sensitivity pixel has been developed for an embedded active-pixel CMOS image sensor by using a standard 0.35-μm CMOS logic process. To achieve in-pixel dark-current cancellation, we developed a combined photogate/photodiode photon-sensing device with a novel operatio...
| প্রকাশিত: | IEEE Transactions on electron devices 50, 1 (2003). |
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| প্রধান লেখক: | |
| বিন্যাস: | প্রবন্ধ |
| ভাষা: | English |
| বিষয়গুলি: |