A CMOS image sensor with dark-current cancellation and dynamic sensitivity operations.

A CMOS image sensor with dark-current cancellation and dynamic sensitivity operations.

An ultralow dark-signal and high-sensitivity pixel has been developed for an embedded active-pixel CMOS image sensor by using a standard 0.35-μm CMOS logic process. To achieve in-pixel dark-current cancellation, we developed a combined photogate/photodiode photon-sensing device with a novel operatio...

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Podrobná bibliografie
Vydáno v:IEEE Transactions on electron devices 50, 1 (2003).
Hlavní autor: Hsiu-Yu Cheng
Médium: Článek
Jazyk:English
Témata:
0.35 micron.
CMOS APS.
Bias conditions variation.
Combined photogate/photodiode photon-sensing device.
Dark signal degradation.
Dark-current cancellation.
Dynamic sensitivity.
Dynamic sensitivity operations.
Embedded active-pixel CMOS image sensor.
High-sensitivity pixel.
Standard CMOS logic process.
Ultralow dark-signal pixel.