Total dose and displacement damage effects in a radiation-hardened CMOS APS.

Total dose and displacement damage effects in a radiation-hardened CMOS APS.

A 512×512 CMOS active pixel sensor (APS) was designed and fabricated in a standard 0.5-μm technology. The radiation tolerance of the sensor has been evaluated with Co-60 and proton irradiation with proton energies ranging from 11.7 to 59 MeV. The most pronounced radiation effect is the increase of t...

Disgrifiad llawn

Manylion Llyfryddiaeth
Cyhoeddwyd yn:IEEE Transactions on electron devices 50, 1 (2003).
Prif Awdur: Bogaerts, J.
Fformat: Erthygl
Iaith:English
Pynciau:
0.5 micron.
11.7 to 59 MeV.
262144 pixel.
512 pixel.
CMOS active pixel sensor.
Co-60 irradiation.
Displacement damage effects.
Fixed pattern noise.
Proton displacement damage.
Proton irradiation.
Proton nonionizing energy loss.
Radiation effect.
Radiation-hardened CMOS APS.
Responsivity changes.
Sensor radiation tolerance evaluation.
Total ionizing dose-induced dark current.