Total dose and displacement damage effects in a radiation-hardened CMOS APS.
A 512×512 CMOS active pixel sensor (APS) was designed and fabricated in a standard 0.5-μm technology. The radiation tolerance of the sensor has been evaluated with Co-60 and proton irradiation with proton energies ranging from 11.7 to 59 MeV. The most pronounced radiation effect is the increase of t...
| Publicado no: | IEEE Transactions on electron devices 50, 1 (2003). |
|---|---|
| Autor principal: | |
| Formato: | Artigo |
| Idioma: | English |
| Assuntos: |