Total dose and displacement damage effects in a radiation-hardened CMOS APS.

A 512×512 CMOS active pixel sensor (APS) was designed and fabricated in a standard 0.5-μm technology. The radiation tolerance of the sensor has been evaluated with Co-60 and proton irradiation with proton energies ranging from 11.7 to 59 MeV. The most pronounced radiation effect is the increase of t...

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Bibliographic Details
Published in:	IEEE Transactions on electron devices 50, 1 (2003).
Main Author:	Bogaerts, J.
Format:	Article
Language:	English
Subjects:	0.5 micron. 11.7 to 59 MeV. 262144 pixel. 512 pixel. CMOS active pixel sensor. Co-60 irradiation. Displacement damage effects. Fixed pattern noise. Proton displacement damage. Proton irradiation. Proton nonionizing energy loss. Radiation effect. Radiation-hardened CMOS APS. Responsivity changes. Sensor radiation tolerance evaluation. Total ionizing dose-induced dark current.