Dark current reduction in stacked-type CMOS-APS for charged particle imaging.
A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. At low operation temperatures (<200 K), the dark current of the CMOS-APS is determined by the hot carrier effect. A twin well CMOS pixel with a p-MOS readout and n-MOS...
| Publicado no: | IEEE Transactions on electron devices 50, 1 (2003). |
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| Autor principal: | |
| Formato: | Artigo |
| Idioma: | English |
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