Dark current reduction in stacked-type CMOS-APS for charged particle imaging.

Dark current reduction in stacked-type CMOS-APS for charged particle imaging.

A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. At low operation temperatures (<200 K), the dark current of the CMOS-APS is determined by the hot carrier effect. A twin well CMOS pixel with a p-MOS readout and n-MOS...

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Bibliographic Details
Published in:IEEE Transactions on electron devices 50, 1 (2003).
Main Author: Takayanagi, I.
Format: Article
Language:English
Subjects:
21 s.
77 to 200 K.
Charged particle detection.
Charged particle imaging.
Dark current reduction.
Fixed-pattern noise.
Hot carrier effect.
Leakage current.
Low operation temperatures.
Mass spectroscopy.
n-MOS reset circuit.
Nondestructive readout correlated double sampling.
p-MOS readout.
Pixel structure.
Read noise.
Stacked CMOS-active pixel sensor.
Twin well CMOS pixel.