New signal readout method for ultrahigh-sensitivity CMOS image sensor.

New signal readout method for ultrahigh-sensitivity CMOS image sensor.

We propose a new signal readout method that uses a charge-transfer circuit. Its application is to an ultrahigh-sensitivity CMOS image sensor on which an avalanche-mode photoconductive film is overlaid. The charge-transfer circuit makes it possible to obtain high signal-to-noise ratio features by tra...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 1 (2003).
Päätekijä: Watabe, T.
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
138 pixel.
19044 pixel.
CMOS image sensor.
Avalanche-mode photoconductive film.
Charge-transfer circuit.
Column-to-column fixed-pattern noise.
High SNR features.
Parasitic capacitance.
Photodiode capacitance.
Random noise.
Signal readout method.
Signal-to-noise ratio.
Solid-state HARP image sensor.
Ultrahigh-sensitivity image sensor.