00000cab a22000003a 4500 UP-99796217609516843 Buklod 20231007234450.0 m |o d | ta 101027s xx d | ||r ||||| || DENGII eng Inoue, I. Low-leakage-current and low-operating-voltage buried photodiode for a CMOS imager. pp. 43-47 A low-leakage current and low-operating-voltage buried-photodiode structure of CMOS image sensors has been developed. The new structure adopted a modified fabrication process as well as an additional shallow p+ layer structure that covers the entire surface of the deep n-type photodiode. The required operating voltage for complete charge transfer from the photodiode is 3.3 V. Furthermore, the leakage current level allows high-quality images comparable to those of CCD image sensors. 3.3 V. CMOS imager. Buried photodiode. Charge transfer. Deep n-type photodiode. Fabrication process. High-quality images. Leakage current. Operating voltage. Shallow p+ layer structure. IEEE Transactions on electron devices 50, 1 (2003). FO UPD DENG-II Article