A CMOS image sensor with a double-junction active pixel.

A CMOS image sensor that employs a vertically integrated double-junction photodiode structure is presented. This allows color imaging with only two filters. The sensor uses a 184*154 (near-QCIF) 6-transistor pixel array at a 9.6-μm pitch implemented in 0.35-μm technology. Results of the device chara...

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Bibliografiska uppgifter
I publikationen:IEEE Transactions on electron devices 50, 1 (2003).
Huvudupphovsman: Findlater, K.M
Materialtyp: Artikel
Språk:English
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