A CMOS image sensor with a double-junction active pixel.

A CMOS image sensor with a double-junction active pixel.

A CMOS image sensor that employs a vertically integrated double-junction photodiode structure is presented. This allows color imaging with only two filters. The sensor uses a 184*154 (near-QCIF) 6-transistor pixel array at a 9.6-μm pitch implemented in 0.35-μm technology. Results of the device chara...

Täydet tiedot

Bibliografiset tiedot
Julkaisussa:IEEE Transactions on electron devices 50, 1 (2003).
Päätekijä: Findlater, K.M
Aineistotyyppi: Artikkeli
Kieli:English
Aiheet:
0.35 micron.
9.6 micron.
CMOS.
Color filters.
Color imaging.
Device characterization.
Double-junction active pixel.
Image sensor.
Monochrome sensor.
Pixel array.
Software processing.
Two-filter color sensor.
Vertically integrated double-junction photodiode structure.