00000cab a22000003a 4500 UP-99796217609516824 Buklod 20231007234450.0 m |o d | ta 101027s xx d | ||r ||||| || DENGII eng Shcherback, I. Photoresponse analysis and pixel shape optimization for CMOS active pixel sensors. pp. 12-18 In this work, a semi-analytical model, based on a thorough analysis of experimental data, is developed for photoresponse estimation of a photodiode-based CMOS active pixel sensor (APS). The model covers the substrate diffusion effect together with the influence of the photodiode active-area geometrical shape and size. It describes the pixel response dependence on integration photocarriers and conversion gain and demonstrates that the tradeoff between these two conflicting factors gives an optimum geometry enabling extraction of maximum photoresponse. The parameter dependence on the process and design data and the degree of accuracy for the photoresponse modeling are discussed. Comparison of the derived expression with the measurement results obtained from a 256×256 CMOS APS image sensor fabricated via HP in a standard 0.5-μm CMOS process exhibits excellent agreement. The simplicity and the accuracy of the model make it a suitable candidate for implementation in photoresponse simulation of CMOS photodiode arrays. 0.5 micron. CMOS active pixel sensors. Conversion gain. Integration photocarriers. Optimum geometry. Photodiode active-area geometrical shape. Photodiode arrays. Photoresponse. Photoresponse analysis. Photoresponse estimation. Pixel response dependence. Pixel shape optimization. Semi-analytical model. Substrate diffusion effect. IEEE Transactions on electron devices 50, 1 (2003). FO UPD DENG-II Article