Effects of uniaxial mechanical stress on drive current of 0.13 μm MOSFETs.

Effects of uniaxial mechanical stress on drive current of 0.13 μm MOSFETs.

We study the effects of both external mechanical stress and intrinsic stress due to trench isolation on drive currents of 0.13 μm-node MOSFETs. The drive current, Idsat, of PMOS is enhanced by about 13% while that of NMOS is reduced by about 9% upon applying a uniaxial compressive stress along the c...

Full description

Bibliographic Details
Published in:IEEE Transactions on electron devices 50, 2 (2003).
Main Author: Wang, Y.G
Format: Article
Language:English
Subjects:
0.13 micron.
MOSFET.
Carrier mobility.
Drive current.
Shallow trench isolation.
Source-drain series resistance.
Uniaxial mechanical stress.