Dong-Won Kim. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. IEEE Transactions on electron devices.
Citação do estilo Chicago (17ª ed.)Dong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices .
Citação MLA (9ª ed.)Dong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices, .
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