Dong-Won Kim. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationDong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices .
MLA (9th ed.) CitationDong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices, .
Warning: These citations may not always be 100% accurate.