APA aipamena

Dong-Won Kim. Reduction of charge-transport characteristics of SiGe dot floating gate memory device with ZrO2 tunneling oxide. IEEE Transactions on electron devices.

Chicago Style aipamena

Dong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices .

MLA aipamena

Dong-Won Kim. "Reduction of Charge-transport Characteristics of SiGe Dot Floating Gate Memory Device with ZrO2 Tunneling Oxide." IEEE Transactions on Electron Devices, .