Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.
芝加哥风格引文Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .
MLA引文Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .
警告：这些引文格式不一定是100％准确.