Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.
Chicago (17e ed.) BronvermeldingSingh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .
MLA (9e ed.) BronvermeldingSingh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .
Let op: Deze citaties zijn niet altijd 100% accuraat.