Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationSingh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .
ציטוט MLASingh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .
אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.