APA ציטוט

Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.

Chicago Style (17th ed.) Citation

Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .

ציטוט MLA

Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .

אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.