Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.
Style de citation Chicago (17e éd.)Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .
Style de citation MLA (9e éd.)Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .
Attention : ces citations peuvent ne pas être correctes à 100%.