Singh, R. Development of high-current 4H-SiC ACCUFET. IEEE Transactions on electron devices.
Cita Chicago (17th ed.)Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices .
Cita MLA (9th ed.)Singh, R. "Development of High-current 4H-SiC ACCUFET." IEEE Transactions on Electron Devices, .
Atenció: Aquestes cites poden no estar 100% correctes.