A multiple-valued logic and memory with combined single-electron and metal-oxide-semiconductor transistors.
Devices that combine single-electron and metal-oxide-semiconductor (MOS) transistors are newly proposed as basic components of multiple-valued (MV) logic, such as a universal literal gate and a quantizer. We verified their operation using single-electron and MOS transistors fabricated on the same wa...
| הוצא לאור ב: | IEEE Transactions on electron devices 50, 2 (2003). |
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| מחבר ראשי: | |
| פורמט: | Article |
| שפה: | English |
| נושאים: |