Yang-Yu Fan. Impact of interfacial layer and transition region on gate current performance for high-K gate dielectric stack: Its tradeoff with gate capacitance. IEEE Transactions on electron devices.
Chicago Style (17th ed.) CitationYang-Yu Fan. "Impact of Interfacial Layer and Transition Region on Gate Current Performance for High-K Gate Dielectric Stack: Its Tradeoff with Gate Capacitance." IEEE Transactions on Electron Devices .
MLA引文Yang-Yu Fan. "Impact of Interfacial Layer and Transition Region on Gate Current Performance for High-K Gate Dielectric Stack: Its Tradeoff with Gate Capacitance." IEEE Transactions on Electron Devices, .
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