Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

Effect of band alignment and density of states on the collector current in p-Si/n-Si1-yCy

p-Si/n-Si1-yCy/p-Si heterojunction bipolar transistors with varying carbon fractions in the base were grown by rapid thermal chemical vapor deposition (RTCVD), to better understand the potential of Si1-yCy in enhancing the performance of Si-based bipolar technology. The band line-up issues which mak...

Mô tả đầy đủ

Chi tiết về thư mục
Xuất bản năm:IEEE Transactions on electron devices 50, 2 (2003).
Tác giả chính: Singh, D.V
Định dạng: Bài viết
Ngôn ngữ:English
Những chủ đề:
RTCVD.
Si-SiC-Si.
Si-based bipolar technology.
Bandgap narrowing.
Bandgap reduction.
Chemical vapor deposition.
Collector current.
Density of states reduction.
Electronic properties.
Energy bandgap offset.
Heavy doping.
Minority carrier recombination lifetime.
P-n-p HBT.
Rapid thermal CVD.
Temperature dependent measurements.
Si/Si1-yCy material system.
p-Si/n-Si1-yCy/p-Si HBTs.