Monte Carlo simulation and measurement of nanoscale n-MOSFETs.

The output characteristics of state-of-the-art n-MOSFETs with effective channel lengths of 40 and 60 nm have been measured and compared with full-band Monte Carlo simulations. The device structures are obtained by process simulation based on comprehensive secondary ion mass spectroscopy and capacita...

Ausführliche Beschreibung

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on electron devices 50, 2 (2003).
1. Verfasser:	Bufler, F.M
Format:	Artikel
Sprache:	English
Schlagworte:	40 nm. 60 nm. C-V measurements. SIMS. Si. Analytic-band Monte Carlo simulation. Capacitance-voltage measurements. Channel velocity profiles. Drift velocity. Full-band Monte Carlo simulations. Nanoscale n-MOSFETs. Nonlinear regime. Nonlinear transport. On-current. Output characteristics. Process simulation. Quasiballistic transport. Secondary ion mass spectroscopy. Source-side velocity.