Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.

Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing.

The surface electron mobility of HfO2 NMOSFETs with a polysilicon gate electrode was studied in terms of the effects of high-temperature forming gas (FG) annealing. The high-temperature FG annealing significantly improved the drive current or the surface electron mobility of the NMOSFETs. Improvemen...

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Détails bibliographiques
Publié dans:IEEE Transactions on electron devices 50, 2 (2003).
Auteur principal: Onishi, K.
Format: Article
Langue:English
Sujets:
C-V characteristics.
CMOSFETs.
EOT scaling.
NMOSFET performance.
NO.
NO annealing.
PMOSFET.
Charge pumping current measurements.
Drive current.
Equivalent oxide thickness scaling.
Gate leakage current.
High-k gate dielectric.
High-temperature forming gas annealing.
Interfacial state density reduction.
Mobility enhancement.
Polysilicon gate electrode.
Subthreshold swings.
Surface carrier mobility improvement.
Surface hole mobility.
HfO2.
HfO2 MOSFETs.
NH3.
NH3 annealing.
NH3 surface nitridation.