Onishi, K. Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on electron devices.
Citazione stile Chigago Style (17a edizione)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
Citatione MLA (9a ed.)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
Attenzione: Queste citazioni potrebbero non essere precise al 100%.