Onishi, K. Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on electron devices.
Chicago-Zitierstil (17. Ausg.)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
MLA-Zitierstil (9. Ausg.)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
Achtung: Diese Zitate sind unter Umständen nicht zu 100% korrekt.