Dyfyniad APA

Onishi, K. Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on electron devices.

Dyfyniad Arddull Chicago

Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .

Dyfyniad MLA

Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .

Rhybudd: Mae'n bosib nad yw'r dyfyniadau hyn bob amser yn 100% cywir.