Onishi, K. Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on electron devices.
Citace podle Chicago (17th ed.)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .
Citace podle MLA (9th ed.)Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .
Upozornění: Tyto citace jsou generovány automaticky. Nemusí být zcela správně podle citačních pravidel..