APA (7 ম সংস্করণ) উদ্ধৃতি

Onishi, K. Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing. IEEE Transactions on electron devices.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices .

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Onishi, K. "Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-temperature Forming Gas Annealing." IEEE Transactions on Electron Devices, .